Factory Lead Time  

14 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

24A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

3.8W Ta 170W Tc

Turn Off Delay Time  

26 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5.5V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2004

JESD-609 Code  

e3

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

100mOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Voltage - Rated DC  

200V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

24A

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

3.8W

Case Connection  

DRAIN

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

100m Ω @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1960pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

86nC @ 10V

Rise Time  

32ns

Vgs (Max)  

±30V

Fall Time (Typ)  

16 ns

Continuous Drain Current (ID)  

24A

Threshold Voltage  

5.5V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

200V

Pulsed Drain Current-Max (IDM)  

96A

Dual Supply Voltage  

200V

Avalanche Energy Rating (Eas)  

250 mJ

Nominal Vgs  

5.5 V

Height  

4.826mm

Length  

10.668mm

Width  

9.65mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Contains Lead, Lead Free